Method and apparatus for depositing atomic layers on a substrate
US10676822B2 · kind B2 · utility
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33References
5Claims
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Key dates
| Filing date | Oct 12, 2017 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Apr 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67784
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.