Semiconductor device including monolithically integrated PMOS and NMOS transistors
US10679899B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Aug 7, 2017 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device involves forming a first transistor having a silicon substrate and a gate, and forming a second transistor, having a germanium substrate, on top of the first transistor. The second transistor is formed by forming a first gate of the second transistor on top of, and electrically coupled to, the gate of the first transistor, bonding the germanium substrate to the first gate of the second transistor so that the bonding does not damage the first transistor, and forming a second gate of the second transistor on the germanium substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.