Structure and method for improving high voltage breakdown reliability of a microelectronic device
US10679935B2 · kind B2 · utility
1Cited by
6References
18Claims
0Family size
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Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48463
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.