Concave reflector for complementary metal oxide semiconductor image sensor (CIS)
US10680024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Mar 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.