Patent · US Active

Solid-state imaging device

US10680028B2 · kind B2 · utility

5Cited by

0References

20Claims

0Family size

Assignee

SONY SEMICONDUCTOR SOLUTIONS CORPORATION · JP

Inventors

Kenji Kobayashi · Osaka, JP
Toshifumi Wakano · Yokohama, JP
Yusuke Otake · Yokohama, JP

Key dates

Filing date	Jul 25, 2018
Grant date	Jun 9, 2020
Priority date	—
Expiry date	Jul 25, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10F30/225
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An imaging device includes a first chip (12). The first chip includes a first pixel (21) and a second pixel (21). The first pixel includes a first anode region (31) and a first cathode region (32), and the second pixel includes a second anode region (31) and a second cathode region (32). The first chip includes a first wiring layer (23). The first wiring layer includes a first anode electrode (37), a first anode via (38) coupled to the first anode electrode (37) and the first anode region (31), and a second anode via (38) coupled to the first anode electrode (37) and the second anode region (31).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.