Display panel, array substrate, thin-film transistor and fabrication method thereof

US10680053B1 · kind B1 · utility

Assignees

• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Yingbin Hu · Beijing, CN
• Liangchen Yan · Beijing, CN
• Ce Zhao · Beijing, CN
• Yuankui Ding · Beijing, CN
• Yang Zhang · San Diego, US
• Yongchao Huang · Beijing, CN
• Luke Ding · Beijing, CN
• Jun Liu · Tangxia, CN

Key dates

• Filing date: Jun 14, 2019
• Grant date: Jun 9, 2020
• Expiry date: Jun 14, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/231

Abstract

A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.