Semiconductor substrate
US10680068B2 · kind B2 · utility
2Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Jul 13, 2017 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Jul 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.