Semiconductor device and method for manufacturing the same
US10680080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Oct 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a gate insulation film and a polysilicon layer on a substrate, forming a polysilicon pattern by etching the polysilicon layer, forming an opening in the polysilicon pattern that exposes a part of the polysilicon pattern by forming a mask pattern on the polysilicon pattern, forming a gate electrode by etching the part of the polysilicon pattern exposed through the opening, forming a P-type body region by ion implanting a P-type dopant onto the substrate using the gate electrode as a mask, forming an N-type LDD region on the P-type body region by ion implanting an N-type dopant onto the substrate using the gate electrode as a mask, forming a spacer on a side surface of the gate electrode, and forming an N-type source region on a side surface of the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.