Semiconductor device
US10680091B2 · kind B2 · utility
2Cited by
0References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Dec 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
In a semiconductor device having a heterojunction type superjunction structure, a drain portion and a source portion are electrically connected to one of a two-dimensional electron gas layer and a two-dimensional hole gas layer, and a gate portion is prevented by an insulating region from directly contacting the one of the two-dimensional election gas layer and the two-dimensional hole gas layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.