Plasmon-enhanced below bandgap photoconductive terahertz generation and detection
US10680124B2 · kind B2 · utility
1Cited by
3References
30Claims
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Key dates
| Filing date | Nov 14, 2016 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q9/285
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed are systems and methods for improving applications involving the generation and detection of electromagnetic radiation at terahertz (THz) frequencies. Embodiments of the systems and methods include the fabrication and use of plasmonic devices that enhance light-matter interaction at the nanometer scale by extreme focusing with nanostructured metals. This plasmonic enhancement is used to produce high efficiency THz photoconductive switches that combine the benefits of low-temperature grown GaAs while using mature 1.55 μm femtosecond lasers operating with photon energy below the GaAs band-gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.