Electrically conductive-semitransparent solid state infrared emitter apparatus and method of use thereof
US10680150B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 21, 2017 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Aug 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention comprises a solid state infrared source and method of use thereof comprising: (1) an electrically conductive film, comprising a semi-transparent material, the semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from the electrically conductive film transmit to an outer surface of the electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers; (2) a first silicon nitride layer; and (3) a second silicon nitride layer, the electrically conductive film positioned between the first silicon nitride layer and the second silicon nitride layer, where applying an electric current of less than one Watt through the electrically conductive film raises a temperature of the electrically conductive film to in excess of eight hundred degrees centigrade in less than twenty milliseconds resultant in the infrared emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.