Patent · US Active

MEMS component having a high integration density

US10680159B2 · kind B2 · utility

2Cited by

5References

13Claims

0Family size

Assignee

SnapTrack, Inc. · US

Inventors

Thomas Metzger · North Tonawanda, US
Jürgen Portmann · Munich, DE

Key dates

Filing date	Dec 18, 2015
Grant date	Jun 9, 2020
Priority date	—
Expiry date	Feb 10, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/11
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.