Complementary metal-oxide-semiconductor depth sensor element
US10684122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jan 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80373
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A complementary metal-oxide-semiconductor depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. A semiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose for increasing the reaction rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.