Selective deposition of metal-organic frameworks
US10685833B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 14, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.