Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes
US10685843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Aug 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.