Semiconductor device and method of manufacturing the same
US10685963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2019 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jan 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises forming an active structure including a plurality of active patterns, a device isolation layer defining the active patterns, and a gate structure across the active patterns and extending in a first direction, forming a first mask pattern on the active structure, and forming a trench by using the first mask pattern as an etching mask to pattern the active structure. Forming the first mask pattern comprises forming in a first mask layer a plurality of first openings extending in a second direction intersecting the first direction, and forming in the first mask layer a plurality of second openings extending in a third direction intersecting the first and second directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.