Anti-fuse one-time programmable (OTP) device
US10685968B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2017 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jan 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device including writing and reading gate electrodes respectively on first and second active regions on a substrate, a first gate insulation pattern between the first active region and the writing gate electrode, a second gate insulation pattern between the second active region and the reading gate electrode, first and second source/drain junction regions in the first and second active regions at sides of the writing and reading gate electrodes, and a connection structure that connects the first and second source/drain junction regions. The first active region has the same conductivity type as the source/drain junction regions. The second active region has a different conductivity type from the source/drain junction regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.