Transistor, semiconductor device, and electronic device

US10685983B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventors

• Daigo Ito · Yokohama, JP
• Yutaka Okazaki · Hiratsuka, JP
• Takahisa Ishiyama · Yokohama, JP

Key dates

• Filing date: Oct 26, 2017
• Grant date: Jun 16, 2020
• Expiry date: Feb 16, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6734

Abstract

To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.