Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region
US10686010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2019 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Apr 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In fabricating a semiconductor device, a shared material is formed in a resonator region of the semiconductor device and in a phase-change material (PCM) switch region of the semiconductor device. A portion of the shared material is removed to concurrently form a heat spreader comprising the shared material in the PCM switch region and a piezoelectric segment comprising the shared material in the resonator region. The piezoelectric segment in the resonator region and the heat spreader in the PCM switch region are situated at substantially the same level in the semiconductor device. The PCM switch region includes a heating element between the heat spreader and a PCM. The resonator region includes the piezoelectric segment between two electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.