Nitride semiconductor light emitting element including electron blocking structure layer

US10686098B2 · kind B2 · utility

Assignee

• NICHIA CORPORATION · JP

Inventors

• Koji Asada · Adumino, JP
• Tokutaro Okabe · Tokushima, JP

Key dates

• Filing date: Aug 20, 2019
• Grant date: Jun 16, 2020
• Expiry date: Aug 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.