Semiconductor light emitting device
US10686101B2 · kind B2 · utility
0Cited by
39References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jul 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.