Germanium-on-silicon laser in CMOS technology
US10686297B2 · kind B2 · utility
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3References
6Claims
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Key dates
| Filing date | Mar 6, 2015 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Mar 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.