Method of making a photonic crystal device and photonic crystal device
US10690847B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 15, 2006 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Dec 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/879
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention is based on the idea of providing a light emitting diode (OLED) device which contains a substrate with a photonic crystal, whereby the formed film structure induces enhancement of the liberation of photons trapped inside the light emitting device structure. The photonic crystal structure is a film structure on a substrate produced using a combination of high and low refractive index materials, at least one of the materials being based on a liquid phase deposited metal-oxide or metalloid oxide material. By means of the invention light trapped due to total internal reflection in a waveguide acting light emitting structure can be extracted efficiently from the device by introducing the photonic crystal device structure between the substrate and conductive anode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.