Patent · US Active

Photonic devices and methods of fabrication thereof

US10690947B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Assignee

STMicroelectronics (Crolles 2) SAS · FR

Inventors

Stephane Monfray · Eybens, FR
Frederic Boeuf · Le Versoud, FR

Key dates

Filing date	Jan 23, 2019
Grant date	Jun 23, 2020
Priority date	—
Expiry date	Jan 23, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG02F2201/063
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.