Patent · US Active

Fin critical dimension loading optimization

US10692769B2 · kind B2 · utility

5Cited by
8References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2017
Grant dateJun 23, 2020
Priority date
Expiry dateOct 31, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/853
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Integrated circuit devices having optimized fin critical dimension loading are disclosed herein. An exemplary integrated circuit device includes a core region that includes a first multi-fin structure and an input/output region that includes a second multi-fin structure. The first multi-fin structure has a first width and the second multi-fin structure has a second width. The first width is greater than the second width. In some implementations, the first multi-fin structure has a first fin spacing and the second multi-fin structure has a second fin spacing. The first fin spacing is less than the second fin spacing. In some implementations, a first adjacent fin pitch of the first multi-fin structure is greater than or equal to three times a minimum fin pitch and a second adjacent fin pitch of the second multi-fin structure is less than or equal to two times the minimum fin pitch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.