Zero capacitance electrostatic discharge device
US10692822B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2019 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Apr 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some examples, an electrostatic discharge (ESD) device includes a substrate layer, a transition layer positioned on the substrate layer, a plurality of superlattice layers on the transition layer and including at least two doped superlattice layers. The ESD device further includes a plurality of doped contact structures extending from the transition layer to a surface of an outermost layer of the plurality of superlattice layers, where a first of the plurality of doped contact structures comprises an anode and a second of the plurality of doped contact structures comprises a cathode, where the plurality of doped contact structures are to generate a zero capacitance ESD device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.