High surge bi-directional transient voltage suppressor
US10692851B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Dec 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A transient voltage suppressor (TVS) is constructed as an NPN bipolar transistor including individually optimized collector-base and emitter-base junctions both with avalanche mode breakdown. The TVS device is constructed using a base that includes a lightly doped base region bordered by a pair of more heavily doped base regions. The two more heavily doped base regions are used to form the collector-base junction and the emitter-base junction both as avalanche breakdown junctions. The lightly doped base region between the collector-base and emitter-base doping regions ensures low leakage current in the TVS device. In this manner, the TVS bipolar transistor of the present invention provides high surge protection with robust clamping while ensuring low leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.