High density self-routing metal-oxide-metal capacitor

US10692967B1 · kind B1 · utility

Assignee

• Analog Devices, Inc. · US

Inventors

• Baozhen Chen · Woburn, US
• Lalinda D. Fernando · Westford, US
• Micah Galletta O'Halloran · Andover, US
• Andrew Wayne Shaw · Milton, US

Key dates

• Filing date: Dec 4, 2018
• Grant date: Jun 23, 2020
• Expiry date: Dec 4, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A self-routing capacitor for an integrated circuit having: a first electrode comprising a first base region and a first finger, the first finger extending from a wall of the first base region in a first direction; a second electrode comprising a second base region and a second finger; the second finger extending from a wall of the second base region in a second direction substantially parallel to and opposing the first direction, the second finger coupled to the first finger; a third electrode comprising a third base region and a third finger, the third finger extending from a first wall of the third base in the second direction; and a fourth electrode comprising a fourth finger, the fourth finger extending from a second wall of the third base region in the first direction. The capacitor being coupled to other metal layers through a base region of an electrode.