Semiconductor device and method of operation for low and high threshold voltage transistors
US10692972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Feb 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A field effect transistor semiconductor device having a compact device footprint for use in automotive and hot swap applications. The device includes a plurality of field effect transistor cells with the plurality of transistor cells having at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell arranged on a substrate. The field effect transistor semiconductor device is configured and arranged to operate the at least one high threshold voltage transistor cell during linear mode operation, and operate both the low threshold voltage transistor cell and the high threshold voltage transistor cell during resistive mode operation. Further provided is a method of operating field effect transistor semiconductor device including a plurality of field effect transistor cells that includes at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.