Semiconductor device having a multi-thickness nanowire
US10693017B2 · kind B2 · utility
2Cited by
28References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2019 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.