Method of selectively transferring semiconductor device
US10693034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2017 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Sep 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.