Reconfigurable gas sensor architecture with a high sensitivity at low temperatures
US10697928B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/0047
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.