Method and circuit for biasing and readout of resistive sensor structure
US10698009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2018 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R17/105
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of biasing and reading-out a passive resistive sensor structure having two excitation nodes and two readout nodes, comprises the steps of: a) determining a first state of a first capacitor corresponding to a first amount of charge biasing the sensor structure such that a biasing current flows through said first capacitor during a first time interval determining a second state of the first capacitor corresponding to a second amount of charge integrating or averaging the readout signal during a second time interval related to the first time interval, thereby obtaining an integrated or averaged readout signal determining the sensor readout signal based on the integrated or averaged readout signal and a change in state of the first capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.