Wafer scale bonded active photonics interposer

US10698156B2 · kind B2 · utility

Assignee

• The Research Foundation for The State University of New York · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Douglas C. La Tulipe, Jr. · Albany, US
• Gerald L. Leake · Albany, US

Key dates

• Filing date: Feb 8, 2018
• Grant date: Jun 30, 2020
• Expiry date: Feb 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

There is set forth herein a method including building an interposer base structure on a first wafer having a first substrate, wherein the building an interposer base structure includes fabricating a plurality of through vias that extend through the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layer; building a photonics structure on a second wafer having a second substrate, wherein the building a photonics structure includes fabricating within a photonics device dielectric stack formed on the second substrate one or more photonics device; and bonding the photonics structure to the interposer base structure to define an interposer having the interposer base structure and one or more photonics device fabricated within the photonics device dielectric stack. There is set forth herein an optoelectrical system including a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, and a photonics device dielectric stack, and a bond layer dielectric stack that integrally bonds the photonics device dielectric stack to the…