Power device
US10700193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2019 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | May 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.