Patent · US Active

Piezoelectric device and production method for piezoelectric device

US10700262B2 · kind B2 · utility

2Cited by
1References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 22, 2017
Grant dateJun 30, 2020
Priority date
Expiry dateFeb 5, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H2003/021
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A piezoelectric resonator includes a piezoelectric thin film including a functional conductor, a fixing layer provided on a principal surface of the piezoelectric thin film to define a void that overlaps a functional portion region, and a support substrate on a principal surface of the fixing layer. A sacrificial layer is provided on a principal surface of a piezoelectric substrate and the fixing layer is provided on the principal surface of the piezoelectric substrate to cover the sacrificial layer. The support substrate is attached to a surface of the fixing layer and the piezoelectric thin film is peeled from the piezoelectric substrate. The functional conductor is provided on the piezoelectric thin film, a through hole is provided in the piezoelectric thin film to straddle a boundary between the fixing layer and the sacrificial layer, and the sacrificial layer is removed by wet etching using the through hole to form the void.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.