MTJ structure having vertical magnetic anisotropy and magnetic element including the same
US10700266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Jan 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.