Polycrystalline dielectric thin film and capacitor element
US10707018B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Feb 1, 2017 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Feb 1, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/308
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.