Thin film transistor, method of manufacturing thin film transistor, and display
US10707313B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/10
Abstract
A thin film transistor includes a gate electrode, an insulation film disposed on the gate electrode, a semiconductor layer facing the gate electrode with the insulation film in between, and a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer. The first wiring layer is in contact with the semiconductor layer between the semiconductor layer and the insulation film, and is configured of a transparent electroconductive film. The second wiring layer is overlapped with a portion of the first wiring layer. Another semiconductor layer made of a material same as a material of the semiconductor layer is stacked on the second wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.