Semiconductor device
US10707341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
Abstract
A semiconductor device includes: a plurality of semiconductor switching elements that are a plurality of MOSFETs each including a Schottky barrier diode; a first ohmic electrode disposed above a first region of a well region and electrically connected to the first region, the first region being on the opposite side from a predefined region; a first Schottky electrode disposed on a semiconductor layer exposed at the first region of the well region; and a line electrically connected to the first ohmic electrode, the first Schottky electrode, and a source electrode. The device enables reduction of a breakdown in a gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.