Light emitting diode and fabrication method thereof

US10707381B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Cheng Meng · Xiamen, CN
• Yuehua JIA · Xiamen, CN
• Jing Wang · Tianjin, CN
• Chun-Yi Wu · New Taipei, TW
• Ching-Shan Tao · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Jul 25, 2019
• Grant date: Jul 7, 2020
• Expiry date: Jul 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.