Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
US10707395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2019 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | May 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.