Single-sided liner PCM cell for 3D crossbar PCM memory
US10707417B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2019 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | May 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A cross-point memory array and method for manufacturing. The memory array includes a plurality of first conductive line structures formed in a dielectric material layer; a plurality of memory elements, each memory element including a fill-in phase change memory (PCM) cell, and an access device enabling read or write access to said memory PCM structure; a plurality of second conductive line structures, the plurality of second conductive structures perpendicularly oriented relative to the plurality of first conductive structures. An individual memory element of the plurality of memory elements is conductively connected at a respective intersection between a first conductive line structure and a second conductive line structure. Each phase change memory (PCM) cell of a memory element at an intersection having a sub-lithographic conductive tuning liner disposed on only one sidewall of the PCM cell. The manufacturing maintains a minimal number of masking and processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.