Wideband low noise amplifier (LNA) with a reconfigurable bandwidth for millimeter-wave 5G communication
US10707817B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 30, 2018 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | May 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G2201/206
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a low noise amplifier (LNA) circuit includes a first stage which includes: a first transistor; a second transistor coupled to the first transistor; a first inductor coupled in between an input port and a gate of the first transistor; and a second inductor coupled to a source of the first transistor, where the first inductor and the second inductor resonates with a gate capacitance of the first transistor for a dual-resonance. The LNA circuit includes a second stage including a third transistor; a fourth transistor coupled between the third transistor and an output port; and a passive network coupled to a gate of the third transistor. The LNA circuit includes a capacitor coupled in between the first and the second stages, where the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.