High-frequency electronic device and manufacturing method thereof
US10709012B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.