Patent · US Active

Doped semiconductors and methods of making the same

US10711184B2 · kind B2 · utility

1Cited by
0References
17Claims
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Key dates

Filing dateNov 22, 2017
Grant dateJul 14, 2020
Priority date
Expiry dateDec 19, 2038

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/95
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present disclosure relates to a composition that includes a first element, a second element, a third element, a ligand, and an anion, where the first element and the second element form a nanocrystal that includes a surface and a crystal lattice, a first portion of the third element covers at least a second portion of the surface in the form of a layer, a third portion of the third element is incorporated into the crystal lattice, and the ligand and the anion are ionically bound to at least one of the second element and/or the first portion of the third element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.