Semiconductor device and manufacturing method of the same
US10712500B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Oct 17, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12107
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a semiconductor device, including a semiconductive substrate, a dielectric stack disposed over the semiconductive substrate to form a wall of a grating coupler opening, and an etch stopper interfacing with two sublayers of the dielectric stack and partially separating the interface of the two sublayers. The etch stopper has a resistance to a fluorine solution that is higher than that of the two sublayers. A method of manufacturing the semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.