Patent · US Active

High frequency amplifier apparatuses

US10714313B2 · kind B2 · utility

0Cited by

24References

6Claims

0Family size

Assignee

TRUMPF HUETTINGER GMBH + CO. KG · DE

Inventors

Andre Grede · Glückstadt, DE
Alexander Alt · Glückstadt, DE
Daniel Gruner · Müllheim, DE
Anton Labanc · Ehrenkirchen, DE

Key dates

Filing date	Dec 26, 2017
Grant date	Jul 14, 2020
Priority date	—
Expiry date	Jul 20, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH03F2200/451
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying flat against a metallic cooling plate and connected to the cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter is connected to the gate connections of the two transistors. Each of the gate connections is connected to ground via at least one voltage-limiting structural element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.