Patent · US Active

Semiconductor structure and method for manufacturing the same

US10714433B2 · kind B2 · utility

1Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 16, 2018
Grant dateJul 14, 2020
Priority date
Expiry dateMay 16, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3512
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor structure includes the following operations. A wafer with an orientation mark at a first crystal orientation represented by a family of Miller indices comprising <ijk> is provided, wherein i2+ j2+ k2=2. A first chip and a second chip are connected to a first surface of the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. The direction is not parallel to the first crystal orientation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.