Method for producing a flat free contacting surface for semiconductor nanostructures

US10714568B2 · kind B2 · utility

Assignee

• Forschungszentrum Jülich GmbH · DE

Inventors

• Sebastian Heedt · Würselen, DE
• Julian Gerharz · Leipzig, DE
• Thomas Schaepers · Aachen, DE
• Detlev Gruetzmacher · Niederzier, DE

Key dates

• Filing date: Oct 22, 2016
• Grant date: Jul 14, 2020
• Expiry date: Oct 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for producing a planar free surface comprising embedded, contactable nanostructures includes arranging at least one nanostructure on a surface of an initial substrate; applying a first layer to the surface of the initial substrate, wherein the first layer embeds the at least one nanostructure; applying a target substrate to the first layer; and separating the initial substrate from the first layer such that the at least one nanostructure embedded in the first layer has a planar free surface. An additional layer is applied to the surface of the initial substrate before the at least one nanostructure is applied to the initial substrate, and in that the initial substrate is removed from the first layer using a solvent.